11/15/2023 0 Comments Nickel oxide x ray diffraction pattern![]() The team foresees prospects for low cost, low power and high integration of QD laser diodes (LDs) allied with complementary metal-oxide-semiconductor (CMOS) electronic processing units for high-capacity data transmission, high-performance optical computing and high-precision light detection and ranging (LiDAR). The researchers comment: “We believe that this work demonstrates the great prospect of Si-based direct epitaxial QD lasers in realizing low power consumption, miniaturization and low-cost silicon photonics chips, which provides a strong driving force for the development of low-cost and high-performance silicon photonic integrated circuits (PICs).” The team attributes their results to a combination of a low threading dislocation density (TDD) gallium arsenide (GaAs) buffer layers, a high-gain QD active region, and p-type modulation doping. The devices on silicon (Si) also demonstrated ultra-high thermal stability with effectively constant threshold currents and slope efficiencies over wide temperature ranges. Institute of Semiconductors and University of Chinese Academy of Sciences in China have claimed record-high continuous wave (CW) operating temperatures of up to 150☌ for 1.3 μm wavelength indium arsenide (InAs) quantum dot (QD) lasers directly grown on on-axis silicon (001) substrates. 20 July 2023 Silicon-based InAs quantum dot laser operation above 150☌ ![]()
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